general description the max2371/max2373 wideband low-noise amplifier (lna) ics are designed for direct conversion receiver (dcr) or very low intermediate frequency (vlif) receiver applications. they contain single-channel, single-ended lnas with switchable attenuator and automatic gain con- trol (agc) intended as a low-noise gain stage. these devices provide high gain-control range (typically 60db) at radio frequency (rf) with excellent noise and reverse isolation characteristics. the max2371/max2373 can work over the frequency range from 100mhz to 1ghz. in practice, only a narrow band is needed in each application, so different matching circuits can be applied. the devices are dynamically con- figured through the digital/analog control pins to select either maximum gain and low noise figure or power-saving mode. in addition, the max2371/max2373 feature high/low-current modes, high/low attenuation modes, lin- early controlled gain states, and shutdown mode. applications direct conversion receiver (dcr) very low if receiver features ? low noise figure (1.8db typical) ? high small-signal gain (15db nominal) ? wide frequency range of operation (100mhz to 1ghz) ? 20db step attenuator ? 45db agc range excluding step attenuator ? 2.65v to 3.3v single-supply operation ? shutdown mode ? 3.5ma supply current, adjustable down to 2.5ma ? 40db reverse isolation max2371/max2373 lnas with step attenuator and vga ________________________________________________________________ maxim integrated products 1 ordering information 19-2301; rev 1; 10/06 for pricing, delivery, and ordering information, please contact maxim/dallas direct! at 1-888-629-4642, or visit maxim? website at www.maxim-ic.com. evaluation kit available part temp range pin- package pkg code max2371 egc -40? to +85? 12 qfn-ep* g1233-1 max2371etc -40? to +85? 12 tqfn-ep* t1233-3 max2371etc+ -40? to +85? 12 tqfn-ep* t1233+3 max2373 egc -40? to +85? 12 qfn-ep* g1233-1 max2373etc -40? to +85? 12 tqfn-ep* t1233-3 max2373etc+ -40? to +85? 12 tqfn-ep* t1233+3 top view 12 gnd 11 rf_v cc 10 rset 45 agc 6 lna_i 1 2 lna_e 3 9 8 7 rx_en agc_byp lna_v cc lna_out max2371 max2373 lna_in rf_attn qfn/tqfn pin configuration agc rf_v cc gnd lna_out lna_in agc_byp exponential converter agc amp lna rf_attn rf attenuator lna_v cc lna_i rx_en lna_e rset max2371 max2373 functional diagram * ep = exposed pad. + denotes lead-free package.
max2371/max2373 lnas with step attenuator and vga 2 _______________________________________________________________________________________ absolute maximum ratings dc electrical characteristics (v cc = 2.775v, rx_en = high, r set = 1.1k , v agc = v cc /2, t a = -40? to +85?. typical values are at t a = +25?, unless other- wise noted.) stresses beyond those listed under ?bsolute maximum ratings?may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. v cc to gnd ...........................................................-0.3v to +3.6v all pins excluding grounds to pin gnd.....-0.3v to (v cc + 0.3v) lna input power (rx_en = low) ........................................5dbm continuous power dissipation (t a = +70?) 12-pin qfn (derate 11.9mw/? above +70?) ...........952mw operating temperature range ...........................-40? to +85? junction temperature ......................................................+150? storage temperature range .............................-65? to +160? soldering temperature (10s) ...........................................+300? parameter symbol conditions min typ max units supply voltage v cc 2.65 2.775 3.30 v rx_en = low, v cc = 3.3v 0.5 20 a lna_i = high, rf_attn = low 3.5 5.5 ma supply current i cc lna_i = low 2.5 3.5 ma digital input logic high v ih pins lna_i, rf_attn, rx_en 0.7 ? v cc v cc v digital input logic low v il pins lna_i, rf_attn, rx_en 0 0.3 ? v cc v logic pin impedance logic pins rx_en, rf_attn, lna_i 50 k ac electrical characteristics (max2371/max2373 ev kits, v cc = 2.65v to 3.3v, rx_en = high, r set = 1.1k , t a = -40? to +85?. typical values are at v cc = 2.775v; for max2371 f rf = 150mhz, for max2373 f rf = 850mhz to 940mhz; t a = +25?, unless otherwise noted.) (note 1) parameter conditions min typ max units lna and agc amp characteristics low band (max2371) 136 150 174 radio frequency range (note 2) high band (max2373) 850 900 940 mhz max2371 -12 -9.5 lna_i = high; rf_attn = low max2373 -15 -9.5 max2371 -14 -10 input return loss (s11) (note 3) lna_i = high; rf_attn = high max2373 -10 -6.5 db max2371 -40 -35 reverse isolation (s12) over agc range max2373 -42 -35 db max2371 13 14.5 16 lna_i = high, t a = +25?, v cc = 2.775v max2373 14 15.5 17 max2371 10.5 12 max power gain (note 3) lna_i = low, t a = +25?, v cc = 2.775v max2373 10.5 13 db gain variation over temperature t a = -40? to +85?, v agc < 1.8v -2.0 2.0 db
max2371/max2373 lnas with step attenuator and vga _______________________________________________________________________________________ 3 ac electrical characteristics (continued) (max2371/max2373 ev kits, v cc = 2.65v to 3.3v, rx_en = high, r set = 1.1k , t a = -40? to +85?. typical values are at v cc = 2.775v; for max2371 f rf = 150mhz, for max2373 f rf = 850mhz to 940mhz; t a = +25?, unless otherwise noted.) (note 1) parameter conditions min typ max units v agc = 1.275v 1.8 2.2 v agc = 1.575v 5.0 7.7 v agc = 1.875v 11 14.5 lna_i = high, t a = +25?, v cc = 2.775v, rf_attn = low v agc = 2.175v 20 ssb noise figure vs. agc lna_i = low, t a = +25?, v cc = 2.775v, rf_attn = low v agc = 1.275v 2.1 2.6 db lna_i = high -21.5 19.5 rf_attn = low, v agc < 1.8v lna_i = low -24 -22 lna_i = high -3 0 input 1db compression point rf_attn = high, v agc < 1.8v lna_i = low -9 -6.5 dbm lna_i = high -5 -1 max2371 -7 -4 rf_attn = low, v agc = v cc /2 lna_i = low max2373 -12 -9 dbm input ip3 (notes 4, 5) rf_attn = high, v agc = v cc /2 to 2.575v lna_i = high 9 13 dbm max2371 -10.5 -8 input ip3 over agc range rf_attn = low, lna_i = high, v agc = v cc /2 to 1.80v max2373 -12.5 -10.5 dbm agc response agc attenuation range (note 6) v cc = 2.775v, rf_attn = low, v agc = 1.3375v to 2.575v, t a = +25?c 35 45 db rf_attn = low, v agc = 1.625v 32 40 47 agc slope over control range rf_attn = high, v agc = 1.625v 24 33 41 db/v rf step attenuator max2371 16.0 17.5 19.0 gain step rf_attn = high to low, lna_i = high max2373 18.0 19.5 21.0 db note 1: parameters over temperature and supply voltage range are guaranteed by design and characterization, unless otherwise noted. note 2: operation outside these frequency bands is possible but has not been characterized. see typical operating characteristics . note 3: measured with external matching network. note 4: f in1 = 150mhz, f in2 = 150.1mhz, p in = -30dbm for both tones (max2371). note 5: f in1 = 900mhz, f in2 = 900.1mhz, p in = -30dbm for both tones (max2373). note 6: parameters are guaranteed by production test.
max2371/max2373 lnas with step attenuator and vga 4 _______________________________________________________________________________________ typical operating characteristics (max2371/max2373 ev kits, v cc = 2.775v, rx_en = high, r set = 1.1k , lna_i = high, t a = +25?. for max2371, f rf = 150mhz; for max2373, f rf = 900mhz, unless otherwise noted.) gain vs. frequency max2371 toc01 frequency (mhz) gain (db) 170 160 150 140 -5 0 5 10 15 20 -10 130 180 t a = +85 c t a = -40 c t a = +25 c rf_attn = low rf_attn = high gain vs. v agc max2371 toc02 v agc (v) gain (db) 2.4 2.0 1.6 -50 -40 -30 -20 -10 0 10 20 -60 1.2 2.8 rf_attn = low rf_attn = high t a = +85 c t a = +25 c t a = -40 c iip3 vs. v agc max2371 toc03 v agc (v) iip3 (dbm) 1.7 1.6 1.4 1.5 -10 -5 0 5 10 15 20 25 -15 1.3 1.8 rf_attn = low rf_attn = high t a = +85 c t a = +25 c t a = -40 c p 1db vs. v agc max2371 toc04 v agc (v) p 1db (dbm) 2.7 2.2 1.7 -20.0 -15.0 -10.0 -5.0 0 5.0 10.0 -25.0 1.2 t a = +25 c rf_attn = low rf_attn = high t a = +85 c t a = -40 c noise figure vs. v agc max2371 toc05 v agc (v) nosie figure (db) 2.7 2.2 1.7 5 10 15 20 25 30 0 1.2 rf_attn = low rf_attn = high s11, s22, s12 vs. frequency max2371 toc06 frequency (mhz) s11, s22, s12 (db) 170 160 150 140 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -50 130 180 s22 s11 s12 rf_attn = low rf_attn = high s11, s22, s12 vs. v agc max2371 toc07 v agc (v) s11, s22, s12 (db) 2.7 2.2 1.7 -50 -40 -30 -20 -10 0 -60 1.2 s22 s11 s11 s12 rf_attn = high rf_attn = low max2371
max2371/max2373 lnas with step attenuator and vga _______________________________________________________________________________________ 5 iip3 vs. v agc max2371 toc10 v agc (v) iip3 (dbm) 1.7 1.6 1.5 1.4 -10 -5 0 5 10 15 20 -15 1.3 1.8 rf_attn = low rf_attn = high t a = -40 c t a = +25 c t a = +85 c p 1db vs. v agc max2371 toc11 v agc (v) p 1db (dbm) 2.7 2.2 1.7 -20.0 -15.0 -10.0 -5.0 0 5.0 10.0 -25.0 1.2 t a = -40 c t a = 85 c t a = +25 c rf_attn = low rf_attn = high noise figure vs. v agc max2371 toc12 v agc (v) nosie figure (db) 2.7 2.2 1.7 5 10 15 20 25 30 0 1.2 rf_attn = low rf_attn = high typical operating characteristics (continued) (max2371/max2373 ev kits, v cc = 2.775v, rx_en = high, r set = 1.1k , lna_i = high, t a = +25?. for max2371, f rf = 150mhz; for max2373, f rf = 900mhz, unless otherwise noted.) s11, s22, s12 vs. frequency max2371 toc13 frequency (mhz) s11, s22, s12 (db) 920 900 880 860 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -50 840 940 s22 s11 s12 s11 rf_attn = low rf_attn = high s11, s22, s12 vs. v agc max2371 toc14 v agc (v) s11, s22, s12 (db) 2.7 2.2 1.7 -35 -40 -30 -25 -20 -15 -10 -5 0 -50 -45 1.2 s22 s11 s11 s12 rf_attn = high rf_attn = low gain vs. frequency max2371 toc08 frequency (mhz) gain (db) 920 900 880 860 -5 0 5 10 15 20 -10 840 940 t a = +85 c t a = -40 c t a = +25 c rf_attn = low rf_attn = high gain vs. v agc max2371 toc09 v agc (v) gain (db) 2.4 2.0 1.6 -40 -30 -20 -10 0 10 20 -50 1.2 2.8 rf_attn = low rf_attn = high t a = -40 c t a = +25 c t a = +85 c max2373
max2371/max2373 lnas with step attenuator and vga 6 _______________________________________________________________________________________ table 1. max2371 s-parameters (v cc = 2.775v, rx_en = high, lna_i = high, rf_attn = low, p in = -30dbm, t a = +25?.) lna (s11) lna (s21) lna (s12) lna (s22) frequency (mhz) magnitude phase magnitude phase magnitude phase magnitude phase 10 0.943409 -4.8477 5.980672 171.1200 0.002136 -102.490 0.998803 -1.1632 100 0.746965 -29.9420 2.959750 102.1900 0.002021 61.149 0.994752 -4.4481 150 0.728794 -35.6990 2.347308 89.6950 0.003089 138.790 0.985485 -6.0754 200 0.705066 -43.4190 1.769355 75.0130 0.003238 47.793 0.986870 -7.7399 300 0.704636 -55.1180 1.290313 58.1420 0.004439 83.493 0.979073 -11.1180 400 0.719615 -65.2420 1.060230 45.42700 0.003346 82.612 0.963130 -14.6680 500 0.731998 -73.5040 0.930754 36.0670 0.004395 68.614 0.947862 -18.0970 600 0.736258 -80.6450 0.849660 28.4990 0.006155 71.599 0.935998 -21.2670 700 0.738074 -85.6220 0.810047 22.7470 0.004143 56.224 0.930518 -23.5710 800 0.738465 -89.2240 0.796627 18.1080 0.005580 93.741 0.935158 -25.5640 900 0.736843 -91.6690 0.793643 14.3230 0.005309 89.871 0.933372 -27.8980 1000 0.720668 -94.0260 0.801946 9.9632 0.007592 99.418 0.941369 -30.2110 1100 0.712090 -96.1830 0.816554 5.9889 0.008451 122.090 0.940860 -32.2310 1200 0.690343 -98.0560 0.836893 1.1604 0.011955 129.220 0.936774 -34.6290 1300 0.657098 -100.3900 0.861113 -4.3698 0.014966 130.200 0.930219 -37.6190 1400 0.606583 -103.2500 0.891302 -10.2610 0.019602 131.440 0.925103 -40.1400 1500 0.545500 -106.6300 0.925092 -16.1910 0.023963 128.730 0.926670 -42.0800 1600 0.469143 -111.0400 0.966707 -23.1040 0.031521 121.710 0.939042 -43.7830 1700 0.372315 -116.0200 1.002767 -29.9130 0.039505 114.740 0.949456 -45.2980 1800 0.267147 -123.3900 1.021504 -37.6360 0.047321 109.530 0.966296 -46.5300 1900 0.150522 -137.6100 1.021081 -45.7240 0.056859 100.480 0.975001 -48.7600 2000 0.060478 160.4700 0.995004 -53.5490 0.063929 92.788 0.971740 -50.8360
max2371/max2373 lnas with step attenuator and vga _______________________________________________________________________________________ 7 table 2. max2373 s-parameters (v cc = 2.775v, rx_en = high, lna_i = high, rf_attn = low, p in = -30dbm, t a = +25?.) lna (s11) lna (s21) lna (s12) lna (s22) frequency (mhz) magnitude phase magnitude phase magnitude phase magnitude phase 10 0.952248 -0.8171 7.273610 -178.830 0.002162 -89.276 1.000092 -0.8184 100 0.933405 -9.1461 7.077013 163.940 0.001346 78.684 0.993482 -2.3140 200 0.884179 -16.6570 6.529802 150.770 0.002137 32.634 0.991791 -3.8136 300 0.824784 -22.6500 5.929253 139.770 0.002217 72.860 0.983762 -5.6360 400 0.767609 -27.4800 5.400078 130.020 0.001332 86.532 0.971102 -7.2455 500 0.709643 -30.9910 4.904559 121.750 0.001641 86.431 0.958562 -8.9841 600 0.656682 -34.5840 4.431492 113.750 0.002297 70.617 0.955972 -10.7250 700 0.616673 -37.2530 4.016983 107.480 0.001701 105.050 0.946259 -12.1890 800 0.586388 -39.7830 3.644182 101.820 0.002688 73.619 0.941846 -13.4650 900 0.558837 -41.8580 3.313218 97.239 0.001077 143.410 0.933168 -15.1090 1000 0.536056 -42.9140 3.059039 92.435 0.001617 102.100 0.938912 -16.8900 1100 0.524439 -44.4030 2.805078 87.484 0.001442 151.320 0.932492 -18.5160 1200 0.516220 -45.9560 2.614027 82.687 0.002973 178.790 0.926200 -20.8080 1300 0.511487 -47.1900 2.417436 78.482 0.003764 -175.540 0.919094 -23.6930 1400 0.508259 -47.9420 2.253642 74.093 0.004195 -176.470 0.919952 -25.7200 1500 0.504028 -49.1020 2.090210 70.061 0.007366 -163.150 0.917498 -27.9410 1600 0.509736 -50.1550 1.975627 66.443 0.008200 -162.620 0.919486 -29.8050 1700 0.510000 -51.3530 1.841259 63.336 0.010929 -163.870 0.923092 -32.1340 1800 0.513009 -52.9500 1.719293 59.870 0.015327 -160.350 0.924634 -33.9510 1900 0.515994 -54.6510 1.597405 56.385 0.016692 -162.560 0.933781 -36.3470 2000 0.510141 -55.6650 1.467185 53.411 0.018843 -177.660 0.933039 -38.8240 table 3. max2371 typical noise parameters (v cc = 2.775v, rx_en = high, lna_i = high, rf_attn = low, p in = -30dbm, t a = +25?, data from design simulation.) frequency (mhz) nf min (db) ? opt ? opt r n ( ) 130 0.84 0.34 46.4 8.8 140 0.83 0.35 49.3 8.5 150 0.82 0.34 52.7 8.1 160 0.81 0.34 56.2 7.8 170 0.81 0.33 59.8 7.5 180 0.81 0.32 63.4 7.1
max2371/max2373 lnas with step attenuator and vga 8 _______________________________________________________________________________________ detailed description the max2371/max2373 are single-channel, single- ended, low-noise amplifiers with two gain modes and continuous automatic gain control (agc) in both modes. the devices are intended as low-noise gain stages for direct conversion receivers (dcr) or very low if (vlif) receivers. these devices provide high gain-control dynamic range (typ 60db) at rf with excellent noise and reverse isolation characteristics. vary the resistor at pin rset and the inductor at lna_e to meet a wide range of gain and linearity require- ments. the ics can be dynamically configured through pins lna_i and rf_attn. when lna_i is connected to v cc , the lna is in high-current mode, nominally config- ured for maximum gain and low noise figure of the amplifier. if the lna_i pin is grounded, the current of the lna is reduced, and the associated gain, input ip3, and noise figure are degraded. the devices have two gain modes configured by the rf_attn pin. set rf_attn high for low-gain mode; set rf_attn low for high-gain mode. the gain step between these two gain modes typically is 20db. table 4. max2373 typical noise parameters (v cc = 2.775v, rx_en = high, lna_i = high, rf_attn = low, p in = -30dbm, t a = +25?, data from design simulation.) frequency (mhz) nf min (db) ? opt ? opt r n ( ) 850 1.06 0.35 60.5 10.02 870 1.08 0.35 61.8 9.98 890 1.10 0.34 63.3 9.94 910 1.11 0.34 64.7 9.90 930 1.13 0.33 66.2 9.86 950 1.15 0.33 67.7 9.82 pin description pin name function 1 lna_in rf input. requires dc-blocking capacitor and external matching network. 2 lna_e lna emitter. connect to gnd with an inductor. see inductor value in table 5. 3 rx_en lna control. set rx_en high to enable lna; set rx_en low to disable lna. 4 rf_attn attenuator control. set rf_attn high for low-gain mode; set rf_attn low for high-gain mode. 5 agc agc input voltage. set agc to v cc /2 for maximum gain. set agc to v cc - 200mv for minimum gain. if left unconnected, the lna will operate at maximum gain and optimum noise figure. 6 lna_i lna nominal bias-current setting. set lna_i high for high-current mode. set lna_i low for low-current mode. if left unconnected, the default state of the lna is high-current mode. 7 lna_out rf output pin. requires a pullup inductor to lna_v cc and external matching network. 8 lna_v cc supply voltage for the agc amplifier 9 agc_byp agc bypass. connect a capacitor to ground. the value of the capacitor is a compromise of agc response time and blocker frequency offset. 10 rset external pin for precision resistor to ground to set reference bias current for ic; typical bias current is 50? to 100?. 11 rf_v cc supply voltage for the lna. bypass with a capacitor to gnd as close to the pin as possible. do not connect any tuned circuits to this supply pin. 12 gnd ground ep exposed pad internally connected to gnd. connect to a large ground plane to maximize thermal performance. do not use as the sole ground connection point. band l series value (nh) lna type 150mhz (vhf) 33 low band 450mhz (uhf) 10 low band 450mhz (uhf) 2.7 high band 800mhz 2.5 high band 1ghz 1.8 high band table 5. inductor selection
max2371/max2373 lnas with step attenuator and vga _______________________________________________________________________________________ 9 the max2371/max2373 can be turned off in transmit or battery-save standby mode. the receive-enable pin (rx_en) also can turn off the devices even if v cc is not removed, because multiple lnas can be connected to the same v cc for multiband applications. the devices allow external matching networks to configure operation in a wide frequency range. refer to the ev kit schematic for a guide to designing the matching network. applications information agc the agc of the max2371/max2373 is controlled by an external voltage at pin agc. the amplifier is at full gain if the voltage at pin agc is nominally v cc /2. it is at min- imum gain if the voltage at pin agc is v cc . the agc attenuation range, which is continuously variable, is specified at 45db. the ip3 will degrade slightly as agc reduces the gain. the devices include two gain modes. set rf_attn high to enable the low-gain mode, which reduces the gain by about 20db. low-gain mode will increase the system ip3 by approximately 18db, which provides strong signal overload and im protection. an external pin (rf_attn) controls switching between gain modes so this function can be combined with overall agc control. agc is inde- pendent of the choice of gain mode. the gain step between modes is in addition to the range of agc, allow- ing a large overall gain-control range. agc response a linear transfer function between the agc control signal and the agc attenuation is realized in db. the linear relationship in db/v is maintained to ?0% over a speci- fied attenuation range. any compensation for gain-mode change must come from the agc control. after reducing gain by switching the rf_attn pin, reduce the agc voltage to achieve the desired overall gain. the lna current also can be changed by toggling the lna_i pin. this operation is independent of gain mode and agc control. the low-current mode is intended as a second (reduced-current) quiescent point of operation for strong-signal operating environments. matching networks for best performance, match lna_in and lna_out to 50 for the band of operation. typical matching circuits for two bands (136mhz to 174mhz and 850mhz to 940mhz) are shown in the ev kit. the chip impedance changes minimally from low to high gain and with agc. the input requires a dc-blocking capacitor. the size of this capacitor influences the startup time and ip3. there is a trade-off between these: a large dc-blocking capacitor means a good ip3 and slow startup. the maxi- mum startup time is determined by the equation below: maxt start = 40 ? c ac ? r set , where c ac = ac-coupling cap in farads, r set = current- setting resistor in . ip3 will improve with the separation of the interfering tones, so a wider channel system can use a smaller dc- blocking capacitor and achieve a better ip3. the cus- tomer also can change the emitter inductor at lna_e to get the desired linearity and gain. changing this induc- tor value requires a change to the input match. the out- put is an open collector and needs a pullup inductor. a load resistor also can be connected across it. the resis- tor determines the trade-off between the bandwidth of the match and the gain. a small load resistor means a wider match and lower gain. layout issues for best performance, pay attention to power-supply issues as well as to the layout of the rfout matching network. the ev kit can be used as a layout example. ground connections followed by supply bypass are the most important. power-supply bypassing the max2371/max2373 have two supply pins: lna_v cc and rf_v cc . these must be bypassed sepa- rately. it is assumed that there is a large capacitor decoupling the power supply. lna_v cc and rf_v cc are each decoupled with 1500pf (max2371) or 100pf (max2373) capacitor. use separate paths to the ground plane for each of the bypass capacitors, and minimize trace length to reduce inductance. the exposed pad must be connected to system ground with very low impedance vias. power-supply layout to minimize coupling between sections of the ic, the ideal power-supply layout is a star configuration with a large decoupling capacitor at a central v cc node. the v cc traces branch from this central node, each to a sep- arate v cc node in the pc board. at the end of each trace is a bypass capacitor that has low esr at the rf of operation. this arrangement provides local decoupling at each v cc pin. at high frequencies, any signal leaking out of one supply pin sees a relatively high impedance (formed by the v cc trace inductance) to the central v cc node and an even higher impedance to any other supply pin, as well as a low impedance to ground through the bypass capacitor.
max2371/max2373 lnas with step attenuator and vga maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a maxim product. no circu it patent licenses are implied. maxim reserves the right to change the circuitry and specifications without notice at any time. _____________________maxim integrated products, 120 san gabriel drive, sunnyvale, ca 94086 408-737-7600 2006 maxim integrated products is a registered trademark of maxim integrated products, inc. impedance-matching network layout the input- and output-matching networks are sensitive to layout-related parasitic inductions. to minimize parasitic inductance, keep traces short and place components as close as possible to the chip. to minimize parasitic capacitance, minimize the area of the plane. chip information transistor count: 360 agc rf_v cc gnd lna_out lna_in 2.775 v dc agc_byp exponential converter agc amp lna rf_attn rf attenuator rf input match lna_v cc lna_i rset 1.1k precision rx_en lna_e max2371 max2373 typical operating circuits revision history pages changed at rev 1: 1, 8, 10
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